irf630a транзистор параметры цоколевка
Irf630a транзистор параметры цоколевка
Наименование прибора: IRFS630A
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 38 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 6.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 22 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 95 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
IRFS630A Datasheet (PDF)
0.1. irfs630a.pdf Size:508K _samsung
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin
Характеристики транзистора IRF630
Согласно своим техническим характеристикам, транзистор IRF630 хорошо подходит для использования в импульсных блоках питания, преобразователях тока в постоянный или переменный, стабилизаторах, системах управления двигателями и других устройствах. Это мощный, n-канальный, полевой транзистор. Они завоевали популярность благодаря сочетанию таких качеств: быстрое переключение, надёжность, низкое сопротивления в открытом состоянии и экономическая эффективность.
Распиновка
Цоколевка транзистора IRF630 выполнена в корпусе ТО-220. Маркировка наносится сверху. Если смотреть на устройство, то слева направо будут расположены: затвор, сток, исток, как это показано на рисунке.
Предельно допустимые параметры это то, на что стоит в первую очередь обратить внимание при выборе транзистора для замены. Их превышение, так же, как и длительная эксплуатация на максимальных рабочих режимах может привести к поломке изделия. Приведём их ниже.
Характеристики IRF630
Электрические характеристики производители делят на три раздела:
Измерения производились при температуре +25°С, если не указано иное значение. Остальные параметры, при которых производилось тестирование, указаны в отдельной колонке.
| Электрические характеристики транзистора IRF630 (при Т = +25 о C) | ||||||
| Статические: | ||||||
| Наименование | Режимы измерения | Обозн. | MIN | TYP | MAX | Ед. изм |
| Напряжение пробоя С-И | VGS= 0 В,ID= 250 мА | VDS | 200 | В | ||
| Температурный к-т изменения напряжения С-И | относительно 25°C, ID = 1 мА | 0,24 | В/°С | |||
| Пороговое напряжение З-И | VDS= VGS, ID=250 мА | VGS(th) | 2 | 4 | В | |
| Ток утечки затвора | VGS= ± 20 В | IGSS | ±100 | нА | ||
| Ток стока при нулевом напряжении затвора | VDS=200 В, VGS= 0 V | IDSS | 25 | мкА | ||
| VDS=160 В, VGS=0 В, TJ= 125 °C | 250 | мкА | ||||
| Сопротивление С-И при открытом транзисторе | VGS= 10 В, ID= 5,4 A | RDS(on) | 0,4 | Ом | ||
| Крутизна передаточной характеристики | VDS= 50 В, ID= 5,4 A | gfs | 3,8 | |||
| Динамические: | ||||||
| Наименование | Режимы измерения | Обозн. | MIN | TYP | MAX | Ед. изм |
| Входная емкость | VGS= 0 В, VDS= 25 В, f = 1,0 МГц | Ciss | 800 | пФ | ||
| Выходная емкость | Coss | 240 | пФ | |||
| Емкость З-И | Crss | 76 | пФ | |||
| Заряд на затворе открывающий транзистор | VGS= 10 В, ID= 5.9 A, VDS= 160 В | Qg | 43 | нКл | ||
| Заряд З-И | VGS= 10 В, ID= 5.9 A, VDS= 160 В | Qgs | 7 | нКл | ||
| Заряд З-С | VGS= 10 В, ID= 5.9 A, VDS= 160 В | Qgd | 23 | нКл | ||
| Время открытия транзистора | VDD=100 В, ID=5,9A, Rg=12Ом, RD=16Ом | td(on) | 9,4 | нс | ||
| Время нарастания импульса открытия | tr | 28 | нс | |||
| Время закрытия транзистора | td(off) | 39 | нс | |||
| Время спада импульса | tf | 20 | нс | |||
| Индуктивность стока | LD | 4,5 | нГн | |||
| Индуктивность истока | LS | 7,5 | нГн | |||
| Характеристики канала исток-сток: | ||||||
| Наименование | Режимы измерения | Обозн. | MIN | TYP | MAX | Ед. изм |
| Непрерывный длительный ток через истоковый диод | IS | 9 | А | |||
| Максимальный импульсный ток через диод | ISM | 36 | А | |||
| Падение напряжения на диоде | TJ= 25 °C, IS= 9,0 A, VGS= 0 В | VSD | 2 | В | ||
| Время обратного восстановления | TJ= 25 °C, IF= 5,9 A, dI/dt = 100 A/мкС | trr | 170 | 340 | ||
| Заряд восстановления | Qrr | 1,1 | 2,2 | |||
Аналоги
Перечислим полевые транзисторы, которые совпадают с IRF630 как по характеристикам, так и по типу корпуса:
Можно также попробовать заменить на следующие устройства, близкие по многим характеристикам, но все же имеющими небольшие отличия:
Наиболее близкие отечественные аналоги: КП630 и КП737А.
Производители и Datsheet
Среди крупных производителей IFR630 (datasheet можно скачать кликнув название компании) можно выделить: FAIRCHILD SEMICONDUCTOR, VISHAY, STMicroelectronics, Philips Semiconductors, Advanced Power Electronics, Nell Semiconductor, International Rectifier. Есть также и другие производители. В отечественны магазинах чаще всего встречается продукция компаний: STMicroelectronics, VISHAY и International Rectifier.
Irf630a транзистор параметры цоколевка
Наименование прибора: IRF630A
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 72 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 500 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
IRF630A Datasheet (PDF)
0.1. irf630a.pdf Size:945K _samsung
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
0.2. irf630a.pdf Size:245K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION Drain Current TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS This device is n-channel, enhancement mode, power MOSFET designed espec
IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin
8.2. irf630 s 1.pdf Size:99K _philips
Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technology
8.9. irf630 rf1s630sm.pdf Size:129K _fairchild_semi
IRF630, RF1S630SMData Sheet January 20029A, 200V, 0.400 Ohm, N-Channel Power FeaturesMOSFETs 9A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.400power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc
8.10. irf630b.pdf Size:859K _fairchild_semi
IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin
8.11. irf630.pdf Size:177K _fairchild_semi
8.12. irf630pbf.pdf Size:1372K _international_rectifier
PD- 95916IRF630PbF Lead-Free9/27/04Document Number: 91031 www.vishay.com1IRF630PbFDocument Number: 91031 www.vishay.com2IRF630PbFDocument Number: 91031 www.vishay.com3IRF630PbFDocument Number: 91031 www.vishay.com4IRF630PbFDocument Number: 91031 www.vishay.com5IRF630PbFDocument Number: 91031 www.vishay.com6IRF630PbFPeak Diode Recovery dv/dt T
8.13. irf630n.pdf Size:155K _international_rectifier
8.15. irf630spbf.pdf Size:981K _international_rectifier
8.16. irf630.pdf Size:176K _international_rectifier
IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli
IRF630, SiHF630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40RoHS* Fast SwitchingQg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli
IRF630, SiHF630Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Fast Switching RoHS*Qg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDDESCRIPTIONTO-
8.24. hirf630.pdf Size:75K _hsmc
Spec. No. : MOS200401HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/6HIRF630 Series Pin AssignmentHIRF630 / HIRF630FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis power MOSFET is designed for low voltage, high speed powerswitching applicati
8.26. irf630h.pdf Size:594K _nell
RoHS IRF630 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(9A, 200Volts)DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.D They are designed, tested and guaranteed to withstand Dlevel of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab
8.27. irf630s.pdf Size:1779K _kexin
SMD Type MOSFETN-Channel MOSFETIRF630S (KRF630S) Features VDS (V) = 200V A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Cont
8.28. irf630n.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF630NIIRF630NFEATURESStatic drain-source on-resistance:RDS(on) 0.3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
8.29. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis de
8.30. irf630nl.pdf Size:244K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF630NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
8.31. irf630ns.pdf Size:229K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
8.32. irf630b.pdf Size:142K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION Drain Current TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed APPLICATIONS Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conve
8.33. irf630f.pdf Size:108K _inchange_semiconductor
MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package 1 2 3 Low on-stateand thermal resistance Fast switching VDSS=200V; RDS(ON)0.4;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 200 VVGS Gate-source voltage 20 VID Drain Current-continuous@ TC
8.34. irf630.pdf Size:114K _inchange_semiconductor
MOSFET INCHANGE IRF630 N-channel mosfet transistor Features 1 2 3 With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON)0.4;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 200 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC
Irf630a транзистор параметры цоколевка
Наименование прибора: IRF630
Тип транзистора: MOSFET
Максимальная рассеиваемая мощность (Pd): 100 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 40 nC
Выходная емкость (Cd): 1500 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
IRF630 Datasheet (PDF)
IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin
0.2. irf630 s 1.pdf Size:99K _philips
Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance AgRDS(ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor using Trench technology
0.9. irf630 rf1s630sm.pdf Size:129K _fairchild_semi
IRF630, RF1S630SMData Sheet January 20029A, 200V, 0.400 Ohm, N-Channel Power FeaturesMOSFETs 9A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.400power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc
0.10. irf630b.pdf Size:859K _fairchild_semi
IRF630B/IRFS630B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 22 pF)This advanced technology has been especially tailored to Fast switchin
0.11. irf630.pdf Size:177K _fairchild_semi
0.12. irf630pbf.pdf Size:1372K _international_rectifier
PD- 95916IRF630PbF Lead-Free9/27/04Document Number: 91031 www.vishay.com1IRF630PbFDocument Number: 91031 www.vishay.com2IRF630PbFDocument Number: 91031 www.vishay.com3IRF630PbFDocument Number: 91031 www.vishay.com4IRF630PbFDocument Number: 91031 www.vishay.com5IRF630PbFDocument Number: 91031 www.vishay.com6IRF630PbFPeak Diode Recovery dv/dt T
0.13. irf630n.pdf Size:155K _international_rectifier
0.15. irf630spbf.pdf Size:981K _international_rectifier
0.16. irf630.pdf Size:176K _international_rectifier
0.17. irf630a.pdf Size:945K _samsung
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli
IRF630, SiHF630Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.40RoHS* Fast SwitchingQg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD
IRF630S, SiHF630SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 0.40 Surface MountQg (Max.) (nC) 43 Available in Tape and ReelQgs (nC) 7.0 Dynamic dV/dt RatingQgd (nC) 23 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Paralleli
IRF630, SiHF630Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Fast Switching RoHS*Qg (Max.) (nC) 43COMPLIANT Ease of ParallelingQgs (nC) 7.0Qgd (nC) 23 Simple Drive RequirementsConfiguration Single Lead (Pb)-free AvailableDDESCRIPTIONTO-
0.25. hirf630.pdf Size:75K _hsmc
Spec. No. : MOS200401HI-SINCERITYIssued Date : 2004.04.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/6HIRF630 Series Pin AssignmentHIRF630 / HIRF630FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis power MOSFET is designed for low voltage, high speed powerswitching applicati
0.27. irf630h.pdf Size:594K _nell
RoHS IRF630 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(9A, 200Volts)DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.D They are designed, tested and guaranteed to withstand Dlevel of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab
0.28. irf630s.pdf Size:1779K _kexin
SMD Type MOSFETN-Channel MOSFETIRF630S (KRF630S) Features VDS (V) = 200V A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Cont
0.29. irf630a.pdf Size:245K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION Drain Current TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS This device is n-channel, enhancement mode, power MOSFET designed espec
0.30. irf630n.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF630NIIRF630NFEATURESStatic drain-source on-resistance:RDS(on) 0.3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
0.31. irf630nstrrpbf.pdf Size:232K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF630NSTRRPBFDESCRIPTIONDrain Current I =9.3A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis de
0.32. irf630nl.pdf Size:244K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF630NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
0.33. irf630ns.pdf Size:229K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF630NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
0.34. irf630b.pdf Size:142K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION Drain Current TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.4(Max) Fast Switching Speed APPLICATIONS Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conve
0.35. irf630f.pdf Size:108K _inchange_semiconductor
MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package 1 2 3 Low on-stateand thermal resistance Fast switching VDSS=200V; RDS(ON)0.4;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 200 VVGS Gate-source voltage 20 VID Drain Current-continuous@ TC
0.36. irf630.pdf Size:114K _inchange_semiconductor
MOSFET INCHANGE IRF630 N-channel mosfet transistor Features 1 2 3 With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON)0.4;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 200 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC